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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF187/D
The RF MOSFET Line
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment. * Guaranteed Performance @ 880 MHz, 26 Volts Output Power -- 85 Watts PEP Power Gain -- 12 dB Efficiency -- 30% Intermodulation Distortion -- -28 dBc * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
1.0 GHz, 85 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
LIFETIME BUY
CASE 465-06, STYLE 1 NI-780 MRF187
CASE 465A-06, STYLE 1 NI-780S MRF187SR3
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 20 15 250 1.43 -65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.70 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 4
MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA
MRF187 MRF187R3 MRF187SR3 1
LAST ORDER 31JUL04
LAST SHIP 31JAN05
RF Power Field Effect Transistors
MRF187 MRF187R3 MRF187SR3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 Adc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Quiescent Voltage (VDS = 26 Vdc, ID = 550 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 5 Adc) VGS(Q) VDS(on) gfs 3 -- -- -- 0.40 2 5 0.55 -- Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit
LIFETIME BUY
DYNAMIC CHARACTERISTICS Input Capacitance (Includes Internal Input MOScap) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss -- -- -- 295 85 10 -- -- -- pF pF pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 85 W CW, IDQ = 550 mA, f = 880 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Gps 12 13 -- dB
D
30
33
--
%
IMD
--
-31
-28
dBc
IRL
9
15
--
dB
Gps
--
13
--
dB
D
--
33
--
%
IMD
--
-31
--
dBc
IRL
--
12
--
dB
No Degradation In Output Power Before and After Test
MRF187 MRF187R3 MRF187SR3 2
MOTOROLA RF DEVICE DATA
LAST ORDER 31JUL04
LAST SHIP 31JAN05
VGG +
R1 + C1 C2 R2
R3
B1
B2 + +
VDD + C16 C17 C18 C19
L1
L2
RF INPUT
Z7 C8 Z1 C5 C6 C7 C9 Z2 Z3 Z4 Z5 Z6 DUT
C11 Z8
Z9
Z4
Z10 C20
Z11
RF OUTPUT
C10
C14
C15
LIFETIME BUY
Figure 1. MRF187 Schematic
MOTOROLA RF DEVICE DATA
MRF187 MRF187R3 MRF187SR3 3
LAST ORDER 31JUL04
B1 - B2 C1 C2, C16 C3 C4, C13 C5, C20 C6, C15 C7 C8, C9 C10, C11 C12 C14 C17, C18, C19
Ferrite Bead, Fair Rite, 2743019447 10 F, 50 V, Electrolytic Capacitor, ECEV1HV100R Panasonic 0.10 F, B Case Chip Capacitors, CDR33BX104AKWS, Kemet 20000 pF, B Case Chip Capacitor, 200B203MCA50X, ATC 100 pF, B Case Chip Capacitors, 100B101JCA500X, ATC 47 pF, B Case Chip Capacitors, 100B470JCA500X, ATC 0.8 - 8.0 pF, Variable Capacitors, Johanson Gigatrim 4.7 pF, B Case Chip Capacitor, 100B4R7JCA500X, ATC 10 pF, B Case Chip Capacitors, 100B100JCA500X, ATC 16 pF, B Case Chip Capacitors, 100B160JCA500X, ATC 43 pF, B Case Chip Capacitor, 100B430JCA500X, ATC 7.5 pF, B Case Chip Capacitor, 100B7R5JCA500X, ATC 10 F, 35 V, Electrolytic Capacitors, SMT, Kemet
L1, L2 R1 R2 R3 Z1, Z11 Z2, Z10 Z3 Z4 Z5 Z6 Z7 Z8
5 Turns, #24 AWG, 0.059 OD 12 , 1/4 Watt Carbon 4.7 M, 1/4 Watt Carbon 16 k, 1/4 Watt Carbon 0.150 x 0.220 Microstrip 0.410 x 0.220 Microstrip 0.160 x 0.630 Microstrip 0.160 x 0.630 Microstrip 0.098 x 0.630 Microstrip 0.098 x 0.630 Microstrip 0.210 x 0.220 Microstrip 0.050 x 0.220 Microstrip
LAST SHIP 31JAN05
C3
C4
C12
C13
TYPICAL CHARACTERISTICS
D , DRAIN EFFICIENCY (%), Gps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 865 870 IRL VDD = 26 V IDQ = 550 mA, Pout = 85 WATTS (PEP) TWO-TONE MEASUREMENT, 100 kHz TONE SPACING Gps IMD 875 880 885 f, FREQUENCY (MHz) 890 D 0 -5 -10 -15 -20 -25 -30 -35 -40 895 -10 -20 -30
-40 -50 -60 -70 0.1 3rd Order 7th Order
5th Order
10 1.0 Pout, OUTPUT POWER (WATTS) PEP
100
LIFETIME BUY
Figure 2. Class AB Broadband Circuit Performance
Figure 3. Intermodulation Distortion Products versus Output Power
Pout, OUTPUT POWER (WATTS) PEP, D , DRAIN EFFICIENCY (%)
160 140 120 Gps
Pout
16 14 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 12
17 16 15 14 13 12 11 10 0.1 250 mA 1100 mA 900 mA 700 mA 550 mA 400 mA
1300 mA
100 80 60 40 20 0 0 0.5 1.0 D
4 2 4.5 5.0 0 5.5
VDD = 26 V f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100
1.5 2.0 2.5 3.0 3.5 4.0 Pin, INPUT POWER (WATTS)
Figure 4. Class AB Parameters versus Input Power
- 10 - 20 - 30 - 40 400 mA - 50 - 60 0.1 900 mA 1300 mA 550 mA 1.0 10 VDD = 26 V f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 250 mA
Figure 5. Power Gain versus Output Power
1100 mA
700 mA
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus Output Power
MRF187 MRF187R3 MRF187SR3 4
MOTOROLA RF DEVICE DATA
LAST ORDER 31JUL04
VDD = 26 V IDQ = 550 mA f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING
10 8 6
IMD, INTERMODULATION DISTORTION (dBc)
LAST SHIP 31JAN05
VDD = 26 V IDQ = 550 mA f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING
f = 865 MHz 895 MHz
Zin Zo = 10
LIFETIME BUY
f = 865 MHz ZOL* 895 MHz
VCC = 26 V, IDQ = 550 mA, Pout = 85 W PEP f MHz 865 880 895 Zin Zin 1.04 + j1.51 1.03 + j1.39 1.03 + j1.29 ZOL* 1.13 - j0.091 1.20 - j0.176 1.28 - j0.242
= Complex conjugate of source impedance. Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.
ZOL* =
Note:
Figure 7. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF187 MRF187R3 MRF187SR3 5
LAST ORDER 31JUL04
LAST SHIP 31JAN05
C1 TO GATE BIAS FEEDTHRU R1
C2 R3
C3 B1 C4 L1 Z2 Z3 C8 C11 Z5
C13 C12
C16 B2 TO DRAIN BIAS FEEDTHRU C17 C18 C19 Z7 C14 Z8 C15 C20
R2
L2
C5
Z1
C7 Z4 C9 Z6 C10
C6
LIFETIME BUY
REV 1
Figure 8. MRF187 Populated PC Board Layout Diagram
MRF187 MRF187R3 MRF187SR3 6
MOTOROLA RF DEVICE DATA
LAST ORDER 31JUL04
LAST SHIP 31JAN05
PACKAGE DIMENSIONS
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
G
1
2X
Q bbb
M
TA
M
B
M
3
B
(FLANGE)
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H C
(LID)
M
TA TA
B B
M
ccc aaa
M
TA TA
M
B B
M
S
M M M M M
(INSULATOR) M
ccc
F E A A
(FLANGE)
T
SEATING PLANE
CASE 465-06 ISSUE F NI-780 MRF187
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF
B
(FLANGE)
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A A
(FLANGE)
CASE 465A-06 ISSUE F NI-780S MRF187SR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MOTOROLA RF DEVICE DATA
MRF187 MRF187R3 MRF187SR3 7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/
MRF187 MRF187R3 MRF187SR3 8
MOTOROLA RF DEVICE DATA
MRF187/D


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